西安電力電子技術研究所生產的大功率整流管管芯直徑最大可達125mm，燒結式全壓接、特殊表面鈍化及冷壓封裝等工藝制成。其特點有阻斷電壓高、通態(tài)壓降低、穩(wěn)定性可靠性高、性能理想、外形美觀。 適用于高壓直流輸電、靜止無功補償、交—交變頻、電力電源、電機控制、電力開關等裝置，是機電一體化的重要基礎器件。 The high power ectifier diodes （chips’ diameter up to 125mm）are processed by multi-diffusion, silicon-to-metal alloy or pressure contact, special surface passivation and cold welding encapsulation etc. Their features are high blocking voltage and also low on-state voltage, high reliability and stability, idea performance and good look. PERI’s high power thyristors and rectifier diodes are widely used in HVDC, SVC, VVVF, PWM, high capability power supply, motor control, power switch system. They are the important basic devices for machine-electrical unification.